Nordson MARCH

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RIE Anisotropic & Isotropic Plasma Etching System

Nordson MARCH's RIE-1701 Plasma System is designed for advanced etching applications such as: removal of interlayer films for failure analysis, de-encapsulation and dielectric material removal, etching of oxides, nitrides, polyimides, silicon, metal, III-V and II-VI materials for MEMS, LED, or IC device manufacturing, epoxy removal; photoresist stripping and descum.

Affordable reactive ion etching (RIE) in a compact, bench top configuration

The RIE-1701 anisotropic reactive ion etch plasma system from Nordson MARCH is completely self-contained, requiring minimal bench space. The plasma etchers chassis, which also serves as an integrated safety enclosure, houses the plasma chamber, control electronics, 13.56 MHz RF generator, and the automatic matching network (only the vacuum pump is external to the system). Maintenance access is provided through an interlocked door or easily removed panels.

The plasma chamber is constructed of high-quality anodized aluminum with ceramic fixtures for superior durability. The plasma chamber can be configured with 6" or 8" powered electrodes to accommodate a wide range of wafer sizes, piece-parts, IC packages and other components.

High performance plasma etching for Failure Analysis or MEMs and LED device manufacturing

The RIE-1701 plasma etching system is designed for advanced etching applications such as: removal of interlayer films for failure analysis, de-encapsulation and dielectric material removal, etching of oxides, nitrides, polyimides, silicon, metal, III-V and II-VI materials for MEMS, LED, or IC device manufacturing, epoxy removal; photoresist stripping and descum.

This plasma etcher can accommodate a wide range of process gases, including: Ar, O2, H2/forming gas, He, CF4, and SF6. Standard are 2 electronic mass flow controllers for optimal gas control, with 2 more available as options (4 total).

RIE Anisotropic & Isotropic Plasma Etching System Features and Benefits

  • Touch screen control and graphical user interface provide real-time process data and feedback
  • 13.56 MHz RF generator with automatic matching network delivers excellent process repeatability
  • Temperature control loop integrated into plasma chamber enables precise control available
  • Optional turbo-molecular pump package and butterfly valve pressure control available
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