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CS-1701 Anisotropic RIE Plasma System

This product is no longer sold, but we offer support and spare parts.

Please see the RIE-1701 for a replacement product.

The CS 1701 Reactive Ion Etching system delivers performance often associated with high-investment etching tools.

The system is excellent for metal etching, silicide etching and etching of III-V compounds, anisotropic etching of nitrides, oxides and polyimides.

Key performance features of the CS 1701 system include the large DC bias and the ability to control process pressure independent of gas flow. The system allows users a wide variety of etch profiles ranging from anisotropic requiring high aspect ratios to sloped walls.

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RIE-1701 - Reactive Ion Etch Plasma SystemRIE-1701 - Reactive Ion Etch Plasma System

The RIE-1701 Plasma System is designed for advanced etching applications such as: removal of interlayer films for failure analysis, de-encapsulation and dielectric material removal and etching.