Controlling process pressure is a critical parameter in obtaining the desired etch profile. The RIE-1701 plasma system provides for chamber pressure control independent of process gas flow.
Key performance features of the RIE-1701 system include the large DC bias and the ability to control process pressure independent of gas flow. The system allows users a wide variety of etch profiles ranging from anisotropic requiring high aspect ratios to sloped walls.
Related Solutions
Bonding PreparationDepending on the process gas selected, plasma can clean, activate and roughen the surface to optimize the strength and quality of the bond by enhancing the physical and chemical aspects of the bond.
Paint AdhesionThe utilization of plasma treatment for Industrial applications has proven to be a vital step to alter surface characteristics for enhanced paint adhesion.